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In this letter, protons (hydrogen ions, H ions) transport-induced unstable transient electrical characteristics were found and studied in the etching-stop-layer in via-contact-type amorphous-indium–gallium–zinc-oxide thin-film t...
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In this letter, protons (hydrogen ions, H ions) transport-induced unstable transient electrical characteristics were found and studied in the etching-stop-layer in via-contact-type amorphous-indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs) for the first time. By applying negative gate bias stress, more water molecules will be absorbed on the surface of the passivation layer, and thus the transmission of net protons in the etching-stop will increase. The proton transport model established in this letter can effectively analyze the a-IGZO TFTs instability using the threshold voltage ( determined from the current–voltage measurements, and which is unstable in a moist environment.
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A strategy is presented for modeling of performance variation in polycrystalline thin-film transistors (TFT's) due to grain size variation. A Poisson area scatter is used to model the number of grains in a TFT, which is converted ...
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A strategy is presented for modeling of performance variation in polycrystalline thin-film transistors (TFT's) due to grain size variation. A Poisson area scatter is used to model the number of grains in a TFT, which is converted to grain size and substituted into physically based models for threshold and mobility. An increase in device variation is predicted as the device and grain sizes converge through scaling or process changes. Comparison of the model with measurements of NMOS TFT's results in reasonable agreement.
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High performance super TFTs with different channel widths and lengths, formed by a novel grain enhancement method, are reported. High temperature annealing has been utilized to enhance the polysilicon grain and improve the quality...
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High performance super TFTs with different channel widths and lengths, formed by a novel grain enhancement method, are reported. High temperature annealing has been utilized to enhance the polysilicon grain and improve the quality of silicon crystal after low temperature MILC treatment on amorphous silicon. With device scaling, it is possible to fabricate the entire transistor on a single grain, thus giving the performance of single crystal SOI MOSFET. The effects of grain boundaries on device performance have been studied, indicating the existence of extra leakage current paths caused by the grain boundaries traversing the channel, which induced subthreshold hump and early punchthrough of wide devices. The probability for the channel region of a TFT to cover multiple grains decreases significantly when the device is scaled down, resulting in better device performance and higher uniformity.
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Application of amorphous oxide thin film transistor (TFT) to electronic paper is demonstrated. We have fabricated a 4-in. bottom gate amorphous In-Ga-Zn-O (a-IGZO) TFT array and combined it with an electrophoretic frontplane. The ...
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Application of amorphous oxide thin film transistor (TFT) to electronic paper is demonstrated. We have fabricated a 4-in. bottom gate amorphous In-Ga-Zn-O (a-IGZO) TFT array and combined it with an electrophoretic frontplane. The resolution of the display is 200 ppi and the number of the pixel is 640 x 480 (QVGA). As far as we know, this is the largest pixel count display which has been driven by oxide based TFTs. Moreover, we propose a low-cost fabrication process for oxide based TFT. A printing process was employed to form the source and drain electrodes. The source and electrodes were printed by a standard screen-printing method. A fine pattern for the source and drain electrodes with a channel length of 40 gm was successfully printed onto the a-IGZO semiconductor layer. Our a-IGZO TFT with printed source and drain electrodes shows high on/off ratio of more than seven orders of magnitude and field effect mobility of 2.8 cm(2)/V s.
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Both p- and n-channel poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si/sub 1-x/Ge/sub x//Si sandwi...
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Both p- and n-channel poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si/sub 1-x/Ge/sub x/ material. Also an offset region placed between the channel and the drain is used to reduce the leakage current. Furthermore, the concept of conductivity modulation in the offset region is used to provide a high on-state current. Results show that the transistors provide a high on-state current as well as a low leakage current compared to those of conventional offset drain TFTs. The p- and n-channel CMTFTs can be combined to form CMOS drivers, which are very suitable for use in low temperature large area electronic systems on glass applications.
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We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposit...
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We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm/sup 2//V-s, on/off current ratio as large as 10/sup 8/, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.
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Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the o...
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Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 x 10(7) Omega cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10(4). (c) 2006 Elsevier B.V. All rights reserved.
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The realization of a high-speed printing technique with high resolution and pattern fidelity is critical to making printed electronics a viable technology for electronics manufacturing. The printing requirements of printed electro...
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The realization of a high-speed printing technique with high resolution and pattern fidelity is critical to making printed electronics a viable technology for electronics manufacturing. The printing requirements of printed electronics are substantially different that those of graphic arts. To make printed electronics a reality, it is necessary to deliver high resolution, good reproducibility, excellent pattern fidelity, high process throughput, and compatibility with the requisite semiconductor, dielectric, and conductor inks. In this paper, we review the physics of pattern formation from pixelated primitives, such as those that exist during inkjet and gravure printing, and will show how control of drop merging and drying can be used to produce high-fidelity shapes, including lines, squares, and intersections. We additionally discuss the physical underpinnings of gravure printing and inkjet printing, and show how these techniques can be scaled to produce high-fidelity highly scaled patterns, including sub-2 micron features at printing speeds of 1 m/s. Finally, in conjunction with high-performance materials, we describe our realization of high-performance fully printed transistors on plastic, offering high-switching speed, excellent process throughput, and good fidelity over large areas.
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Flexible transistors were fabricated by sputter deposition of zinc tin oxide (ZTO) onto plasma-enhanced chemical vapor deposited gate dielectrics formed on flexible polyimide substrates with aluminum gate electrodes. Using output ...
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Flexible transistors were fabricated by sputter deposition of zinc tin oxide (ZTO) onto plasma-enhanced chemical vapor deposited gate dielectrics formed on flexible polyimide substrates with aluminum gate electrodes. Using output characteristics, the contact resistance of Al/ZTO contacts was found to be in the range of 100 k Omega causing significant on-current degradation. ZTO transistors with indium tin oxide (ITO) contacts exhibited high on-currents of 1.5 mA, on/off ratios of 10(6), subthreshold voltage slopes of 1.6 V/decade, threshold voltages of -8.8 V, and mobilities of 14 cm(2) V-1 s(-1). Capacitance measurements are shown to be useful for assessing contact resistance. (c) 2006 Elsevier B.V. All rights reserved.
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Complementary hybridization of ZnO thin films with aluminum tetraphenylporphyrin (Al(III)TPP), zinc tetra-phenylporphyrin (Zn(II)TPP) and H2TPP (tetraphenylporphyrin) was adopted for tuning the hybrid thin film transistor (TFT) pe...
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Complementary hybridization of ZnO thin films with aluminum tetraphenylporphyrin (Al(III)TPP), zinc tetra-phenylporphyrin (Zn(II)TPP) and H2TPP (tetraphenylporphyrin) was adopted for tuning the hybrid thin film transistor (TFT) performance and improving their flexibility. After the hybridization with the organic layers, the chemical and structural features of ZnO thin films were well-preserved as compared with those of solely ZnO thin films. The existence of organic layers was monitored by X-ray photoelectron spectroscopy depth profiling. We fabricated the TFT based on ZnO/organic layers, resulting in the on-off ratio and threshold voltage of the devices manipulated by selecting the organic layers. These results can be understood by the performance tuning mechanisms related with the electron charge transfer induced by a work function difference. Remarkably, a significant improvement of the flexibility in the hybrid films was achieved without any significant loss in optical transmittance, which will be high demand in transparent and flexible electronics.
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